MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

6
MRF6S20010NR1 MRF6S20010GNR1
−10
−20
−30
−40
−50
−60
−70
18
17
16
15
14
13
12
11
0.1
0.1
Figure 6. Intermodulation Distortion Products
V
f1 = 2170 MHz, f2 = 2170.1 MHz
Two−Tone Measurements
I
DQ
DD
Figure 4. Two - Tone Power Gain versus
162.5 mA
= 195 mA
= 28 Vdc, I
130 mA
97.5 mA
65 mA
P
out
P
5th Order
DQ
out
, OUTPUT POWER (WATTS) PEP
versus Output Power
, OUTPUT POWER (WATTS) PEP
= 130 mA
Output Power
1
1
V
Two−Tone Measurements
100 kHz Tone Spacing
DD
= 28 Vdc, f = 2170 MHz
40
36
32
28
24
20
16
2050
TYPICAL CHARACTERISTICS
V
I
DQ
Figure 3. Two - Tone Wideband Performance
DD
= 130 mA, 100 kHz Tone Spacing
= 28 Vdc, P
3rd Order
2090
10
10
G
@ P
7th Order
out
ps
= 10 W (PEP)
out
f, FREQUENCY (MHz)
η
D
30
30
2130
= 10 Watts (PEP)
IRL
IMD
2170
−10
−20
−30
−40
−50
−60
−20
−30
−40
−50
−60
−70
— 2110 - 2170 MHz
0.1
0.1
V
I
(f1 + f2)/2 = Center Frequency of 2170 MHz
Figure 7. Intermodulation Distortion Products
DQ
V
Two−Tone Measurements
100 kHz Tone Spacing
DD
DD
5th Order
3rd Order
7th Order
= 130 mA, Two−Tone Measurements
= 28 Vdc, P
= 28 Vdc, f = 2170 MHz
Figure 5. Third Order Intermodulation
2210
Distortion versus Output Power
97.5 mA
P
out
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
−5
−10
−15
−20
−25
−30
, OUTPUT POWER (WATTS) PEP
= 10 W (PEP)
−35
−40
1
1
I
DQ
Freescale Semiconductor
= 65 mA
130 mA
195 mA
10
RF Device Data
162.5 mA
10
100
30