MRF6S21060NBR1 Freescale Semiconductor, MRF6S21060NBR1 Datasheet

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MRF6S21060NBR1

Manufacturer Part Number
MRF6S21060NBR1
Description
MOSFET RF N-CH 28V 14W TO272-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S21060NBR1

Transistor Type
N-Channel
Frequency
2.11GHz
Gain
15.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
610mA
Voltage - Test
28V
Power - Output
14W
Package / Case
TO-272-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

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Manufacturer
Quantity
Price
Part Number:
MRF6S21060NBR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
MRF6S21060NBR1
Manufacturer:
FREESCALE
Quantity:
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© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
t o 2 1 7 0 M H z . S u i t a b l e f o r T D M A , C D M A a n d m u l t i c a r r i e r a m p l i f i e r
applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and
TD-SCDMA applications.
• Typical 2-Carrier W-CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• 225_C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W-CDMA base station applications with frequencies from 2110
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
out
Power Gain — 15.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 14 Watts Avg., f = 2115.5 MHz, Channel Bandwidth = 3.84 MHz,
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 610 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Document Number: MRF6S21060N
CASE 1486-03, STYLE 1
CASE 1484-04, STYLE 1
MRF6S21060NR1 MRF6S21060NBR1
2110-2170 MHz, 14 W AVG., 28 V
MRF6S21060NBR1
MRF6S21060NBR1
MRF6S21060NR1
MRF6S21060NR1
TO-270 WB-4
TO-272 WB-4
LATERAL N-CHANNEL
PLASTIC
PLASTIC
RF POWER MOSFETs
-65 to +150
Value
2 x W-CDMA
-0.5, +68
-0.5, +12
Value
0.89
1.04
150
225
(2,3)
Rev. 5, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

Related parts for MRF6S21060NBR1

MRF6S21060NBR1 Summary of contents

Page 1

... RF POWER MOSFETs CASE 1486-03, STYLE 1 TO-270 WB-4 PLASTIC MRF6S21060NR1 CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC MRF6S21060NBR1 Symbol Value Unit V -0.5, +68 Vdc DSS V -0.5, +12 Vdc GS °C T -65 to +150 stg °C T 150 C °C T 225 J (2,3) Symbol Value Unit °C/W R θJC 0.89 1.04 MRF6S21060NR1 MRF6S21060NBR1 1 ...

Page 2

... Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21060NR1 MRF6S21060NBR1 2 Rating 3 = 25°C unless otherwise noted) A Symbol ...

Page 3

... Microstrip Arlon CuClad 250GX-0300-55-22, 0.030″, ε PCB Description CDR33BX104AKYS ATC100B4R7BT500XT ATC100B6R8BT500XT GRM55DR61H106KA88L CRCW12061001FKEA CRCW12061002FKEA CRCW120610R0FKEA V SUPPLY C4 C5 OUTPUT Z10 Z11 Z12 Z13 Z14 C8 V SUPPLY C10 C11 = 2.55 r Part Number Manufacturer Kemet ATC ATC Murata Vishay Vishay Vishay MRF6S21060NR1 MRF6S21060NBR1 RF 3 ...

Page 4

... Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout MRF6S21060NR1 MRF6S21060NBR1 C10 C11 MRF6S21060N Rev Device Data Freescale Semiconductor ...

Page 5

... Watts Avg. out 39 38 η - -28 -12 -30 -15 -18 -32 -21 -34 -24 2200 2220 = 28 Watts Avg. out = 28 Vdc 2135 MHz 2145 MHz I = 305 mA DQ 915 mA 610 mA 763 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21060NR1 MRF6S21060NBR1 100 200 5 ...

Page 6

... Vdc 610 2140 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21060NR1 MRF6S21060NBR1 6 TYPICAL CHARACTERISTICS 57 55 P3dB = 49.986 dBm (99. P1dB = 49.252 dBm (84. 100 28 Figure 8. Pulsed CW Output Power versus Vdc 610 -30_C 2135 MHz 2145 MHz 2-Carrier W-CDMA, 10 MHz Carrier η ...

Page 7

... Software & Tools/Development Tools/Calculators to access MTTF calculators by product. W-CDMA TEST SIGNAL +20 +30 0 -10 -20 -30 -40 -50 -60 -70 -80 - 210 230 250 = 26%. D 3.84 MHz Channel BW -ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW -IM3 in +IM3 in 3.84 MHz BW 3.84 MHz -15 - FREQUENCY (MHz) Figure 14. 2‐Carrier W‐CDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 ...

Page 8

... Figure 15. Series Equivalent Source and Load Impedance MRF6S21060NR1 MRF6S21060NBR1 Ω load f = 2110 MHz f = 2170 MHz f = 2170 MHz Vdc 610 mA Avg out source load Ω Ω MHz 2110 7.59 - j8.39 3.31 - j5.35 2140 6.71 - j8.83 3.17 - j5.16 2170 5.84 - j8.62 3.06 - j4.92 ...

Page 9

... Arlon CuClad 250GX-0300-55-22, 0.030″, ε PCB * Copper foil tape soldered onto PCB Description CDR33BX104AKYS ATC100B4R7BT500XT ATC100B6R8BT500XT GRM55DR61H106KA88L CRCW12061001FKEA CRCW12061002FKEA CRCW120610R0FKEA V SUPPLY Z12 Z13 Z14 Z15 Z16 C8 V SUPPLY C9 C10 C11 = 2.55 r Part Number Manufacturer Kemet ATC ATC Murata Vishay Vishay Vishay MRF6S21060NR1 MRF6S21060NBR1 RF OUTPUT 9 ...

Page 10

... Figure 17. MRF6S21060NR1(NBR1) Test Circuit Component Layout — TD-SCDMA MRF6S21060NR1 MRF6S21060NBR1 C10 C11 MRF6S21060N Rev Device Data Freescale Semiconductor ...

Page 11

... Adj Alt Alt 7.5 1.28 MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz +ALT2 in 1.28 MHz BW +3.2 MHz Offset - +ALT1 in 1.28 MHz BW 1.28 MHz BW -1.6 MHz Offset +1.6 MHz Offset Span 25 MHz 2.5 MHz f, FREQUENCY (MHz) MRF6S21060NR1 MRF6S21060NBR1 11 ...

Page 12

... Figure 22. Series Equivalent Input and Load Impedance — TD-SCDMA MRF6S21060NR1 MRF6S21060NBR1 Ω load f = 1950 MHz f = 2070 MHz f = 2070 MHz Vdc 560 load W W MHz 1950 2.227 - j9.127 3.341 - j8.372 1960 2.168 - j8.942 3.239 - j8.218 1970 2.124 - j8.757 3.168 - j8.084 1980 2.073 - j8.606 3 ...

Page 13

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21060NR1 MRF6S21060NBR1 13 ...

Page 14

... MRF6S21060NR1 MRF6S21060NBR1 14 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 15 ...

Page 16

... MRF6S21060NR1 MRF6S21060NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 17 ...

Page 18

... MRF6S21060NR1 MRF6S21060NBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 16-18. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for and added “Measured in GS(Q) 2 and listed MRF6S21060NR1 MRF6S21060NBR1 19 ...

Page 20

... For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1-800-441-2447 or +1-303-675-2140 Fax: +1-303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S21060NR1 MRF6S21060NBR1 Document Number: MRF6S21060N Rev. 5, 12/2008 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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