MRF6S21060NBR1 Freescale Semiconductor, MRF6S21060NBR1 Datasheet - Page 19

• Manufacturer Part Number: MRF6S21060NBR1
• Description: MOSFET RF N-CH 28V 14W TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21060NBR1

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 610mA
• Voltage - Test: 28V
• Power - Output: 14W
• Package / Case: TO-272-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
4
5
Dec. 2006
Dec. 2008
Date
• Added “TD-SCDMA” to data sheet description, p. 1
• Updated Part Numbers in Table 7, Component Designations and Values, to RoHS compliant part numbers,
• Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical
• Added Product Documentation and Revision History, p. 17
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Corrected V
• Updated PCB information to show more specific material details, Figs. 1, 16, Test Circuit Schematic,
• Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps
• Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 13-15. Added pin numbers 1 through
• Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 16-18. Added pin numbers 1 through
p. 4
characteristic curves, test signal and series impedance, p. 9-12
number, PCN13232, p. 1, 2
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C
in Capable Plastic Package bullet, p. 1
Functional Test”, On Characteristics table, p. 2
p. 3, 9
part numbers, p. 3, 9
limitations, p. 6
operating characteristics and location of MTTF calculator for device, p. 7
4 on Sheet 1.
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
DS
to V
PRODUCT DOCUMENTATION
DD
in the RF test condition voltage callout for V
REVISION HISTORY
Description
MRF6S21060NR1 MRF6S21060NBR1
GS(Q)
, and added “Measured in
2
and listed
19