MRF6S21060NBR1 Freescale Semiconductor, MRF6S21060NBR1 Datasheet - Page 5

• Manufacturer Part Number: MRF6S21060NBR1
• Description: MOSFET RF N-CH 28V 14W TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21060NBR1

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 610mA
• Voltage - Test: 28V
• Power - Output: 14W
• Package / Case: TO-272-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
17
16
15
14
13
12
11
1
V
Two-Tone Measurements, 10 MHz Tone Spacing
305 mA
458 mA
610 mA
DD
Figure 5. Two-T one Power Gain versus
763 mA
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
P
out
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P
Figure 4. 2-Carrier W-CDMA Broadband Performance @ P
, OUTPUT POWER (WATTS) PEP
Output Power
10
15.8
15.6
15.4
15.2
14.8
14.6
14.4
14.2
15.6
15.4
15.2
14.8
14.6
14.4
14.2
16
15
14
15
14
2060
2060
I
DQ
= 915 mA
V
I
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
V
I
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
DQ
DQ
DD
DD
2080
2080
= 610 mA, 2-Carrier W-CDMA
= 610 mA, 2-Carrier W-CDMA
= 28 Vdc, P
= 28 Vdc, P
TYPICAL CHARACTERISTICS
2100
2100
100
IM3
G
out
IM3
out
IRL
ps
f, FREQUENCY (MHz)
= 28 W (Avg.)
= 14 W (Avg.)
f, FREQUENCY (MHz)
2120
2120
200
2140
2140
2160
2160
-1 0
-2 0
-3 0
-4 0
-5 0
-60
ACPR
ACPR
IRL
Figure 6. Third Order Intermodulation Distortion
1
2180
2180
V
Two-Tone Measurements, 10 MHz Tone Spacing
G
DD
458 mA
ps
η
= 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
D
2200
2200
out
η
out
P
D
915 mA
out
2220
2220
= 14 Watts Avg.
= 28 Watts Avg.
MRF6S21060NR1 MRF6S21060NBR1
, OUTPUT POWER (WATTS) PEP
versus Output Power
28
27
26
25
24
-36
-38
-40
-42
-44
-46
39
38
37
36
-26
-28
-30
-32
-34
763 mA
10
I
DQ
-5
-10
-15
-20
-25
-6
-9
-12
-15
-18
-21
-24
= 305 mA
610 mA
100
200
5