MRF6S21060NBR1 Freescale Semiconductor, MRF6S21060NBR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6S21060NBR1
• Description: MOSFET RF N-CH 28V 14W TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21060NBR1

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 610mA
• Voltage - Test: 28V
• Power - Output: 14W
• Package / Case: TO-272-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF6S21060NR1 MRF6S21060NBR1
6
17
16
15
14
13
12
10
-60
11
-1 0
-2 0
-3 0
-4 0
-5 0
0.1
V
I
f = 2140 MHz
DQ
Figure 7. Intermodulation Distortion Products
DD
Figure 10. Power Gain and Drain Efficiency
V
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
DD
= 610 mA
3rd Order
5th Order
7th Order
= 28 Vdc
1
= 28 Vdc, P
P
versus CW Output Power
T
out
C
, OUTPUT POWER (WATTS) CW
out
versus Tone Spacing
TWO-T ONE SPACING (MHz)
= -30_C
85_C
= 60 W (PEP), I
25_C
1
10
η
G
D
DQ
ps
60
50
40
30
20
10
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
= 610 mA
0
V
f1 = 2135 MHz, f2 = 2145 MHz
2-Carrier W-CDMA, 10 MHz Carrier
Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
DD
and Drain Efficiency versus Output Power
= 28 Vdc, I
1
TYPICAL CHARACTERISTICS
10
G
ps
100
P
out
-30 _C
DQ
25_C
85_C
, OUTPUT POWER (WATTS) AVG.
= 610 mA
200
100
70
60
50
40
30
20
10
0
10
16
15
14
13
12
10
57
55
53
51
49
47
45
43
11
28
0
η
85_C
T
D
Figure 11. Power Gain versus Output Power
ACPR
P1dB = 49.252 dBm (84.18 W)
C
Figure 8. Pulsed CW Output Power versus
= -30_C
IM3
P3dB = 49.986 dBm (99.68 W)
-30 _C
-30 _C
30
20
100
P
out
25_C
25_C
85_C
25_C
, OUTPUT POWER (WATTS) CW
32
P
200
40
in
, INPUT POWER (dBm)
0
-10
-20
-30
-40
-50
-60
Input Power
34
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
DD
60
V
= 28 Vdc, I
DD
Freescale Semiconductor
= 24 V
36
80
DQ
28 V
= 610 mA
RF Device Data
38
I
f = 2140 MHz
DQ
100
= 610 mA
32 V
Actual
40
Ideal
120