BLS2731-50,114 NXP Semiconductors, BLS2731-50,114 Datasheet - Page 3

• Manufacturer Part Number: BLS2731-50,114
• Description: TRANSISTOR RF POWER SOT422A
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-50,114

• Package / Case: SOT-422A
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 9dB
• Power - Max: 80W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 80000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934045770114; BLS2731-50 TRAY; BLS2731-50 TRAY

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance at T
1998 Jan 30
V
V
V
I
P
T
T
T
Z
V
V
I
I
I
h
C
Class-C; t
CM
j
CBO
CES
EBO
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
sld
th j-h
CBO
CES
EBO
tot
(BR)CBO
(BR)CES
= 25 C unless otherwise specified.
c
Microwave power transistor
MODE OF OPERATION
p
= 100 s; = 10%
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
thermal impedance from junction to heatsink
collector-base breakdown voltage
collector-emitter breakdown voltage I
collector leakage current
collector leakage current
emitter leakage current
DC current gain
collector capacitance (die only)
h
= 25 C in a common-base test circuit.
PARAMETER
PARAMETER
PARAMETER
2.7 to 3.1
(GHz)
f
open emitter
R
open collector
t
t
up to 0.2 mm from ceramic cap;
t
I
V
V
V
V
V
f = 1 MHz
p
p
C
C
CB
CE
EB
CB
CE
BE
= 100 s;
= 15 mA; open emitter
= 15 mA; V
10 s
100 s;
= 40 V; I
= 40 V; V
= 1.5 V; I
= 5 V; I
= 1 V; I
= 0
V
(V)
40
CE
CONDITIONS
3
C
E
CONDITIONS
E
= i
C
= 1.5 A
BE
BE
= 10%; T
= 0
= 0
10%
e
= 0
= 0
t
= 0;
p
= 100 s;
typ. 60
(W)
P
mb
50
L
CONDITIONS
= 25 C
75
75
40
= 10%; note 1
MIN.
typ. 9
(dB)
G
30
8
65
p
MIN.
TYP.
BLS2731-50
Product specification
75
75
2
6
80
+200
200
235
1.5
3
0.3
VALUE
MAX.
MAX.
0.3
typ. 40
(%)
35
C
V
V
V
A
W
V
V
mA
mA
mA
pF
C
C
C
UNIT
UNIT
UNIT
K/W