BLS2731-50,114 NXP Semiconductors, BLS2731-50,114 Datasheet - Page 4

• Manufacturer Part Number: BLS2731-50,114
• Description: TRANSISTOR RF POWER SOT422A
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-50,114

• Package / Case: SOT-422A
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 9dB
• Power - Max: 80W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 80000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934045770114; BLS2731-50 TRAY; BLS2731-50 TRAY

Philips Semiconductors
1998 Jan 30
handbook, halfpage
handbook, halfpage
Microwave power transistor
V
(1) f = 3.1 GHz.
(2) f = 2.7 GHz.
(3) f = 2.9 GHz.
V
Fig.4
CB
CB
Fig.2
(W)
( )
P L
= 40 V; class-C; t
Z i
= 40 V; class-C; P
60
40
20
16
12
0
8
4
0
2.6
0
Input impedance as function of frequency
(series components); typical values.
Load power as a function of drive power;
typical values.
2
p
L
= 100 s;
2.8
= 50 W.
4
= 10%.
6
(1)
3
(2)
f (GHz)
8
P D (W)
(3)
x i
r i
MGM533
MGM535
3.2
10
4
handbook, halfpage
handbook, halfpage
V
V
Fig.5
CB
CB
(dB)
G p
Fig.3
( )
Z L
= 40 V; class-C; P
= 40 V; class-C; P
12
12
8
4
0
8
4
0
4
8
2.6
2.6
Load impedance as function of frequency
(series components); typical values.
Power gain as function of frequency;
typical values.
L
L
2.8
= 50 W; t
2.8
= 50 W.
p
= 100 s; = 10%.
3
3
BLS2731-50
Product specification
f (GHz)
f (GHz)
X L
R L
MGM534
MGM536
3.2
3.2