BLS2731-50,114 NXP Semiconductors, BLS2731-50,114 Datasheet - Page 6

• Manufacturer Part Number: BLS2731-50,114
• Description: TRANSISTOR RF POWER SOT422A
• Manufacturer: NXP Semiconductors

Specifications of BLS2731-50,114

• Package / Case: SOT-422A
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 75V
• Frequency - Transition: 3.1GHz
• Gain: 9dB
• Power - Max: 80W
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 1.5A, 5V
• Current - Collector (ic) (max): 6A
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 80000 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure (db Typ @ F): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934045770114; BLS2731-50 TRAY; BLS2731-50 TRAY

Philips Semiconductors
PACKAGE OUTLINE
1998 Jan 30
Flanged hermetic ceramic package; 2 mounting holes; 2 leads
Microwave power transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
OUTLINE
VERSION
SOT422A
0.225
0.190
5.72
4.83
A
H
0.205
0.195
5.21
4.95
b
U 2
A
A
0.005
0.003
0.13
0.08
c
IEC
0.391
0.381
9.93
9.68
D
10.29
10.03
0.405
0.395
D 1
JEDEC
0.345
0.335
8.76
8.51
D 1
U 1
E
D
q
b
REFERENCES
10.29
10.03
0.405
0.395
E 1
3
1
2
0
0.062
0.058
w 2
1.58
1.47
F
M
scale
EIAJ
6
5
C
21.61
21.08
0.89
0.83
H
C
10 mm
0.135
0.125
3.43
3.18
F
B
p
p
0.132
0.115
3.35
2.92
w 1
Q
M
A B
16.51
0.65
q
22.99
22.73
0.905
0.895
PROJECTION
U 1
EUROPEAN
E 1
0.390
0.380
9.91
9.65
U 2
c
Q
BLS2731-50
Product specification
0.25
0.01
w 1
ISSUE DATE
97-12-24
0.76
0.03
w 2
E
SOT422A