MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 45

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

State Diagram
Figure 14: Simplified State Diagram
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
ACT = ACTIVE
AREF = AUTO REFRESH
BST = BURST TERMINATE
CKEH = Exit power-down
CKEL = Enter power-down
DPD = Enter deep power-down
applied
Power
WRITE
LMR
PRE
PREALL
Power
PRE
EMR
LMR
WRITE A
on
WRITING
WRITING
power-
Active
down
DPDX = Exit deep power-down
EMR = LOAD EXTENDED MODE REGISTER
LMR = LOAD MODE REGISTER
PRE = PRECHARGE
PREALL = PRECHARGE all banks
READ = READ w/o auto precharge
DPDX
WRITE
LMR
CKEL
power-
down
Deep
WRITE A
WRITE A
CKEH
PRE
DPD
Precharging
precharged
all banks
active
45
Row
Idle:
ACT
PRE
SREF
READ A
WRITE
READ
256Mb: x16, x32 Mobile LPDDR SDRAM
CKEH
refresh
READ A
PRE
Self
SREFX
Micron Technology, Inc. reserves the right to change products or specifications without notice.
SRR
CKEL
READ
Precharge
AREF
power-
down
terminate
READING
READING
BST
Burst
SRR
READ A
READ A = READ w/ auto precharge
SREF = Enter self refresh
SREFX = Exit self refresh
SRR = STATUS REGISTER READ
WRITE = WRITE w/o auto precharge
WRITE A = WRITE w/ auto precharge
refresh
Automatic sequence
Command sequence
Auto
READ
READ
©2008 Micron Technology, Inc. All rights reserved.
READ
State Diagram