MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 65

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 28: READ-to-PRECHARGE
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQ4
DQS
DQS
DQ
CK#
CK#
CK
CK
4
Notes:
Banka,
Col n
Banka,
Col n
READ
READ
T0
T0
1. BL = 4, or an interrupted burst of 8 or 16.
2. PRE = PRECHARGE command.
3. ACT = ACTIVE command.
4. D
5. Shown with nominal
6. READ-to-PRECHARGE equals 2 clocks, which enables 2 data pairs of data-out.
7. A READ command with auto precharge enabled, provided
1
1
cause a precharge to be performed at x number of clock cycles after the READ com-
mand, where x = BL/2.
OUT
n = data-out from column n.
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
T1n
D
(a or all)
(a or all)
t
Bank a,
Bank a,
AC,
OUT
T2
T2
PRE
PRE
t
2
65
2
DQSCK, and
D
T2n
T2n
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
T3
NOP
T3
NOP
OUT
t
DQSQ.
D
Don’t Care
OUT
T3n
t
t
T3n
D
RP
RP
OUT
D
OUT
T4
T4
NOP
NOP
D
OUT
t
RAS (MIN) is met, would
Transitioning Data
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READ Operation
Bank a,
Bank a,
T5
T5
ACT
Row
ACT
Row
3
3