MT46H16M16LFBF-6:H Micron Technology Inc, MT46H16M16LFBF-6:H Datasheet - Page 62

• Manufacturer Part Number: MT46H16M16LFBF-6:H
• Description: DRAM Chip DDR SDRAM 256M-Bit 16Mx16 1.8V 60-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr
• Series: -r

Specifications of MT46H16M16LFBF-6:H

• Package: 60VFBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 166 MHz
• Maximum Random Access Time: 6.5|5 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 60-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 25: Random Read Accesses
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. H 11/09 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 2, 4, 8, or 16 (if 4, 8, or 16, the following burst interrupts the previous).
3. READs are to an active row in any bank.
4. Shown with nominal
OUT
CL = 2
n (or x, b, g) = data-out from column n (or column x, column b, column g).
READ
Bank,
READ
Bank,
Col x
Col x
T1
T1
CL = 3
T1n
T1n
D
t
OUT
AC,
READ
Bank,
READ
Bank,
Col b
Col b
T2
T2
1
62
t
DQSCK, and
D
T2n
T2n
OUT
256Mb: x16, x32 Mobile LPDDR SDRAM
D
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
READ
READ
Bank,
Bank,
Col g
Col g
T3
T3
OUT
t
DQSQ.
D
Don’t Care
T3n
T3n
D
OUT
OUT
D
D
T4
OUT
T4
NOP
NOP
OUT
D
T4n
T4n
D
OUT
OUT
Transitioning Data
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READ Operation
D
T5
T5
NOP
NOP
OUT
D
OUT
T5n
T5n
D
D
OUT
OUT