EMD5DXV6T5G ON Semiconductor, EMD5DXV6T5G Datasheet - Page 4

• Manufacturer Part Number: EMD5DXV6T5G
• Description: TRANS BRT NPN/PNP DL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of EMD5DXV6T5G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K, 47K
• Resistor - Emitter Base (r2) (ohms): 10K, 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

250
200
150
100
50
0
−50
EMD5DXV6T1, EMD5DXV6T5
0
T
Figure 1. Derating Curve
A
, AMBIENT TEMPERATURE ( C)
R
qJA
http://onsemi.com
= 833 C/W
50
4
100
150