EMD5DXV6T5G ON Semiconductor, EMD5DXV6T5G Datasheet - Page 6

• Manufacturer Part Number: EMD5DXV6T5G
• Description: TRANS BRT NPN/PNP DL 50V SOT-563
• Manufacturer: ON Semiconductor

Specifications of EMD5DXV6T5G

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K, 47K
• Resistor - Emitter Base (r2) (ohms): 10K, 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -

0.01
0.8
0.6
0.2
0.1
0.4
10
1
0
1
0
0
I
C
/I
TYPICAL ELECTRICAL CHARACTERISTICS — EMD5DXV6T1 NPN TRANSISTOR
B
= 10
10
Figure 8. Output Capacitance
V
Figure 6. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
20
20
CE(sat)
100
0.1
10
1
T
A
0
Figure 10. Input Voltage versus Output Current
30
versus I
= −25 C
V
O
= 0.2 V
EMD5DXV6T1, EMD5DXV6T5
10
C
40
f = 1 MHz
I
T
E
40
A
= 0 mA
I
= 25 C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75 C
25 C
20
50
50
6
T
A
0.001
30
1000
0.01
100
= −25 C
100
0.1
10
10
1
1
0
Figure 9. Output Current versus Input Voltage
40
75 C
25 C
75 C
2
Figure 7. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
in
50
, INPUT VOLTAGE (VOLTS)
25 C
4
10
T
A
= −25 C
6
V
O
= 5 V
T
A
V
8
= 75 C
CE
= 10 V
25 C
−25 C
100
10