CY8C5386LTI-005 Cypress Semiconductor Corp, CY8C5386LTI-005 Datasheet - Page 80

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CY8C5386LTI-005

Manufacturer Part Number
CY8C5386LTI-005
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY8C5386LTI-005

Lead Free Status / RoHS Status
Compliant
Table 11-57. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL)
Table 11-58. NVL DC Specifications
Table 11-59. NVL AC Specifications
11.7.4 SRAM
Table 11-60. SRAM DC Specifications
Table 11-61. SRAM AC Specifications
Document Number: 001-55035 Rev. *F
Twrite
Vsram
Fsram
Parameter
Parameter
Parameter
Parameter
Parameter
Single byte erase/write cycle time
EEPROM endurance
EEPROM data retention time
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Description
Description
Description
Description
Description
PRELIMINARY
Retention period measured from
last erase cycle (up to 100K cycles)
Vddd pin
Programmed at 25°C
Programmed at 0 to 70°C
Programmed at 25°C
Programmed at 0 to 70°C
Conditions
Conditions
Conditions
Conditions
Conditions
PSoC
®
5: CY8C53 Family Data Sheet
1.71
Min
Min
Min
100
Min
Min
1M
1.2
DC
1K
20
20
20
-
Typ
Typ
Typ
Typ
Typ
2
-
-
-
-
-
-
-
-
-
Max
Max
Max
Max
Max
5.5
80
15
-
-
-
-
-
-
-
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program/
program/
program/
cycles
cycles
cycles
Units
erase
years
Units
Units
erase
erase
years
years
Units
Units
MHz
ms
V
V
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