M38510/20304BFA E2V, M38510/20304BFA Datasheet

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M38510/20304BFA

Manufacturer Part Number
M38510/20304BFA
Description
Manufacturer
E2V
Datasheet
1.M3851020304BFA.pdf (32 pages)

Specifications of M38510/20304BFA

Lead Free Status / RoHS Status
Supplier Unconfirmed
*
(PROM) microcircuits which employ thin film nichrome (NiCr) resistors, tungsten (W), titanium tungsten (TiW), or zapped
vertical emitter (ZVE) as the fusible link or programming element. Two product assurance classes and a choice of case
outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of
MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).
AMSC N/A
1. SCOPE
1.1 Scope. This specification covers the detail requirements for monolithic silicon, programmable read-only memory
1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein.
1.2.1 Device types. The device types are as follows:
1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535.
1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:
MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM),
Comments, suggestions, or questions on this document should be addressed to: Commander, Defense
Supply Center Columbus, ATTN: DSCC-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to
mailto:memory@dscc.dla.mil
this address information using the ASSIST Online database at
The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535.
Outline letter
E
F
Device type
01, 03
02, 04
Descriptive designator
GDIP1-T16 or CDIP2-T16
GDFP2-F16 or CDFP3-F16
This specification is approved for use by all Departments
. Since contact information can change, you may want to verify the currency of
and Agencies of the Department of Defense.
Inactive for new design after 24 July 1995
256 word/4 bits per word PROM with uncommitted collector.
256 word/4 bits per word PROM with active pull-up and a
third high impedance state output.
MILITARY SPECIFICATION
MONOLITHIC SILICON
Circuit
Terminals
http://assist.daps.dla.mil
16
16
Package style
Dual-in-line
Flat pack
MIL-M-38510/203E
18 September 2007
SUPERSEDING
MIL-M-38510/203D
19 January 2006
FSC 5962
INCH-POUND

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M38510/20304BFA Summary of contents

Page 1

MICROCIRCUITS, DIGITAL, 1024 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for monolithic silicon, programmable ...

Page 2

Absolute maximum ratings. Supply voltage range .............................................................................. -0 +7 Input voltage range ................................................................................. - Storage temperature range ..................................................................... -65° to +150°C Lead temperature (soldering, 10 ...

Page 3

Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this specification and ...

Page 4

Characteristic High level output voltage V Low level output voltage V Input clamp voltage V Maximum collector cut-off I CEX current High impedance (off-state) I OHZ output high current High impedance (off-state) I OLZ output low current High level input ...

Page 5

Interim electrical parameters Final electrical test parameters for unprogrammed devices Final electrical test parameters for programmed devices Group A test requirements Group B end-point electrical parameters when using the method 5005 QCI option Group C end-point electrical parameters Group D ...

Page 6

VERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or ...

Page 7

Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows: a. Electrical test requirements shall be as specified in table II herein. b. Subgroups 4, 5, and 6 shall be omitted. ...

Page 8

MIL-M-38510/203E Device type All Case outline E and F Terminal number Terminal symbol GND ...

Page 9

Word Enable no NOTES Not applicable Input may be high level, low ...

Page 10

MIL-M-38510/203E Memory Array Decoder FIGURE 3. Functional block diagram. 10 ...

Page 11

A = Enable buffer B = Output buffer C = Programming driver D = 256 bit memory matrix decoder multiplexer MIL-M-38510/203E FIGURE 3. Functional block diagram – Continued. 11 ...

Page 12

MIL-M-38510/203E CIRCUIT C FIGURE 3. Functional block diagram – Continued. 12 ...

Page 13

MIL-M-38510/203E FIGURE 3. Functional block diagram - Continued 13 ...

Page 14

NOTES: 1. Test table for devices programmed in accordance with an altered item drawing may be replaced by the equivalent tests which apply to the specific program configuration for the resulting read-only memory minimum, including ...

Page 15

NOTE: All other waveform characteristics shall be as specified in table IVA. FIGURE 5a. Typical programming voltage waveforms during programming for circuit A. MIL-M-38510/203E 15 ...

Page 16

NOTES: 1. Output load is 0.2 mA and 12 mA during 7.0 V and 4.0 V check respectively. 2. All other waveform characteristics shall be as specified in table IVB. FIGURE 5b. Typical programming voltage waveforms during programming for circuit ...

Page 17

NOTE: All other waveform characteristics shall be as specified in table IVC. FIGURE 5c. Typical Programming voltage waveforms during programming for circuit C. MIL-M-38510/203E 17 ...

Page 18

MIL-M-38510/203E FIGURE 5d. Programming voltage waveforms during programming for circuit G. 18 ...

Page 19

Programming procedure identification. The programming procedure to be utilized shall be identified by the manufacturer’s circuit designator. 4.7 Programming procedure for circuit A. The programming characteristics in table IVA and the following procedures shall be used for programming the ...

Page 20

Terminal conditions Outputs: Not designated are open or resistive coupled to GND or voltage Inputs: Not designated are high ≥ 2.0 V, low ≤ 0 open. Subgroup Symbol MIL- Cases STD-883 E,F method Test no. ...

Page 21

TABLE III. Group A inspection for device type 01, 03 – Continued. Terminal conditions Outputs: Not designated are open or resistive coupled to GND or voltage Inputs: Not designated are high ≥ 2.0 V, low ≤ 0 open. ...

Page 22

Terminal conditions Outputs: Not designated are open or resistive coupled to GND or voltage Inputs: Not designated are high ≥ 2.0 V, low ≤ 0 open. Subgroup Symbol MIL- Cases STD-883 E,F method Test no. ...

Page 23

Terminal conditions Outputs: Not designated are open or resistive coupled to GND or voltage Inputs: Not designated are high ≥ 2.0 V, low ≤ 0 open. Subgroup Symbol MIL- Cases STD-883 E,F method Test no. ...

Page 24

GALPAT (PROGRAMMED PROM) This program will test all bits in the array, the addressing and interaction between bits for ac performance Each bit in the pattern is fixed by being programmed with a “H” or “L”. ...

Page 25

Programming procedure for circuit B. The programming characteristics in table IVB and the following procedures shall be used for programming the device: a. Connect the device in the electrical configuration for programming. The waveforms on figure 5b and the ...

Page 26

To verify programming, after and CE inputs. The programmed output should remain in the “1” state. Again, lower +4.5 ± 0.2 V, and verify that the programmed output remains in the “1” state. ...

Page 27

TABLE IVA. Programming characteristics for circuit A. Parameter Symbol Address input voltage Programming V PH Voltage to V low Program verify V PHV Verify voltage V R Programming input low I ILP current ...

Page 28

TABLE IVB. Programming characteristics for circuit B. Parameter Symbol V required during V CC CCP programming Rise time of program t TLH pulse to data out or program pin Programming voltage on V program pin Output programming V OUT voltage ...

Page 29

TABLE IVC. Programming characteristics for circuit C. Parameter Symbol Programming voltage V CCP Verification upper limit V CCH Verification lower limit V CCL Verify threshold V S Programming supply I CCP current Input voltage high level V “1” Input voltage ...

Page 30

TABLE IVD. Programming characteristics for circuit G. Parameter Symbol Required V for V CC CCP programming I during programming I CC CCP Required output voltage V for programming Output current while I OP programming Rate of voltage change of I ...

Page 31

NOTES (This section contains information of a general or explanatory nature which may be helpful, but is not mandatory.) 6.1 Intended use. Microcircuits conforming to this specification are intended for logistic support of existing equipment. 6.2 Acquisition requirements. Acquisition ...

Page 32

Logistic support. Lead materials and finishes (see 3.4) are interchangeable. Unless otherwise specified, microcircuits acquired for Government logistic support will be acquired to device class B (see 1.2.2), lead material and finish C (see 3.4). Longer length leads and ...

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