FDMS3602S Fairchild Semiconductor, FDMS3602S Datasheet - Page 3

• Manufacturer Part Number: FDMS3602S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3602S

• Configuration: Dual (MOSFET & SyncFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0044ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS3602S Rev.C5
©2011 Fairchild Semiconductor Corporation
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. E
5. E
V
t
Q
rr
by the user's board design.
SD
rr
Symbol
AS
AS
θJA
of 50 mJ is based on starting T
of 144 mJ is based on starting T
is determined with the device mounted on a 1 in
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
J
= 25
= 25
o
C; N-ch: L = 1 mH, I
o
C; N-ch: L = 1 mH, I
a. 57 °C/W when mounted on
c. 125 °C/W when mounted on a
a 1 in
minimum pad of 2 oz copper
T
2
2
pad of 2 oz copper
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
= 25°C unless otherwise noted
AS
AS
= 10 A, V
= 17 A, V
V
V
Q1
I
Q2
I
F
F
GS
GS
= 15 A, di/dt = 100 A/s
= 26 A, di/dt = 300 A/s
= 0 V, I
= 0 V, I
DD
DD
= 23 V, V
= 23 V, V
Test Conditions
S
S
3
= 26 A
= 15 A
GS
GS
= 10 V. 100% test at L= 0.3 mH, I
= 10 V. 100% test at L= 0.3 mH, I
(Note 2)
(Note 2)
θJC
Type
is guaranteed by design while R
Q1
Q2
Q1
Q2
Q1
Q2
d. 120 °C/W when mounted on a
b. 50 °C/W when mounted on
AS
minimum pad of 2 oz copper
AS
a 1 in
= 15 A.
= 25 A.
2
pad of 2 oz copper
Min
Typ
0.8
0.8
6.6
21
28
28
www.fairchildsemi.com
θCA
Max
1.2
1.2
34
44
13
44
is determined
Units
nC
ns
V