FDMS3602S Fairchild Semiconductor, FDMS3602S Datasheet - Page 8

• Manufacturer Part Number: FDMS3602S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3602S

• Configuration: Dual (MOSFET & SyncFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0044ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS3602S Rev.C5
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.01
50
10
200
100
10
0.1
10
1
0.01
8
6
4
2
0
Figure 20. Gate Charge Characteristics
1
0.01
0
I
D
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 22. Unclamped Inductive
= 26 A
J
A
θ
Figure 24. Forward Bias Safe
JA
= MAX RATED
= 25
= 120
o
V
10
0.1
C
Switching Capability
DS
t
0.1
AV
o
, DRAIN to SOURCE VOLTAGE (V)
C/W
DS
Operating Area
, TIME IN AVALANCHE (ms)
Q
(
on
g
, GATE CHARGE (nC)
)
V
20
DD
T
J
1
V
= 10 V
= 125
DD
1
T
= 16 V
J
= 25
o
C
30
o
V
C
10
DD
10
= 13 V
T
J
= 100
40
100 ms
100
1 ms
10 ms
1s
DC
10s
o
100 300
C
μ
s
100200
50
8
T
J
= 25°C unless otherwise noted
10000
10000
1000
Figure 23. Maximum Continuous Drain
150
120
1000
100
Figure 25. Single Pulse Maximum Power
90
60
30
100
10
0
10
50
1
25
0.1
-4
Figure 21. Capacitance vs Drain
Limited by Package
Current vs Case Temperature
f = 1 MHz
V
GS
10
= 0 V
-3
50
V
to Source Voltage
DS
T
10
C
t, PULSE WIDTH (sec)
, DRAIN TO SOURCE VOLTAGE (V)
,
Dissipation
CASE TEMPERATURE (
-2
V
GS
75
10
= 4.5 V
1
-1
1
100
V
GS
= 10 V
SINGLE PULSE
R
R
θ
10
θ
JC
o
JC
www.fairchildsemi.com
C )
= 2
= 2
125
o
o
100
C/W
10
C/W
C
C
C
oss
iss
rss
1000
150
25