FDMS3602S Fairchild Semiconductor, FDMS3602S Datasheet - Page 9

• Manufacturer Part Number: FDMS3602S
• Description: MOSFET Power 25V Dual N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3602S

• Configuration: Dual (MOSFET & SyncFET)
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 5.6 mOhms
• Forward Transconductance Gfs (max / Min): 67 S
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 0.0044ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / Rohs Status: Details

FDMS3602S Rev.C5
©2011 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 N-Channel)
0.0001
0.001
0.01
0.1
2
1
10
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 26. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
(Note 1d)
10
θ
JA
-2
= 120
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
10
-1
T
J
9
= 25 °C unless otherwise noted
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
100
θJA
t
1
+ T
t
2
A
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1000