MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 114

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

Table 28: DC Characteristics and Operating Conditions (1.8V)
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
Parameter
Sequential READ current
PROGRAM current
ERASE current
Standby current (TTL)
Standby current (CMOS)
Staggered power-up cur-
rent
Input leakage current
Output leakage current
Input high voltage
Input low voltage, all in-
puts
Output high voltage
Output low voltage
Output low current (R/B#)
Notes:
t
RC =
CE#, CLE, ALE, WE#, RE#,
Line capacitance = 0.1µF
1. Typical and maximum values are for single-plane operation only. If device supports dual-
2. Values are for single-die operations. Values could be higher for interleaved-die opera-
3. Measurement is taken with 1ms averaging intervals and begins after V
4. Test conditions for V
5. DC characteristics may need to be relaxed if R/B# pull-down strength is not set to full.
I/O[7:0], I/O[15:0],
CE# = V
V
Rise time = 1ms
V
t
WP# = 0V/V
WP# = 0V/V
OUT
plane operation, values are 20mA (TYP) and 40mA (MAX).
tions.
V
RC (MIN); CE# = V
I
I
Conditions
IN
OH
OL
I
Electrical Specifications – DC Characteristics and Operating
V
CC
OUT
CE# = V
= 0V to V
OL
= +100µA
(MIN).
= 0V to V
= –100µA
WP#
= 0.2V
= 0mA
–
CC
–
–
- 0.2V;
IH
;
CC
CC
CC
CC
IL
;
OH
I
Symbol
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
OL
and V
V
I
I
I
V
I
I
V
I
V
(R/B#)
CC1
CC2
CC3
I
SB1
SB2
I
LO
114
ST
OH
LI
OL
IH
IL
OL
.
0.8 x V
V
CC
Min
–0.3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–
–
–
–
–
–
–
–
–
3
- 0.1
CC
Typ
13
10
10
10
4
–
–
–
–
–
–
–
–
10 per die
V
0.2 x V
CC
Max
±10
±10
0.1
20
20
20
50
1
+ 0.3
–
–
© 2009 Micron Technology, Inc. All rights reserved.
CC
Unit
mA
mA
mA
mA
mA
mA
µA
µA
µA
CC
V
V
V
V
Conditions
reaches
Notes
1, 2
1, 2
1, 2
3
4
4
5