MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 88

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

Figure 62: PROGRAM/ERASE Issued to Locked Block
BLOCK LOCK READ STATUS (7Ah)
Table 20: Block Lock Status Register Bit Definitions
Figure 63: BLOCK LOCK READ STATUS
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
Block Lock Status Register Definitions
Block is locked tight
Block is locked
Block is unlocked, and device is locked tight
Block is unlocked, and device is not locked tight
R/B#
I/Ox
PROGRAM or ERASE
The BLOCK LOCK READ STATUS (7Ah) command is used to determine the protection
status of individual blocks. The address cycles have the same format, as shown below,
and the invert area bit should be set LOW. On the falling edge of RE# the I/O pins output
the block lock status register, which contains the information on the protection status
of the block.
WE#
I/Ox
ALE
CE#
RE#
CLE
Add ress/data input
Locked block
READ STATUS
BLOCK LOCK
7Ah
Add 1 Add 2 Add 3
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
I/O[7:3]
Block address
X
X
X
X
88
CONFIRM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
I/O2 (Lock#)
0
0
1
1
t WHR
t
LBSY
I/O1 (LT#)
Status
© 2009 Micron Technology, Inc. All rights reserved.
Block Lock Feature
0
1
0
1
READ STATUS
70h
I/O0 (LT)
60h
1
0
1
0