MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 80

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

READ FOR INTERNAL DATA MOVE (00h-35h)
Figure 50: READ FOR INTERNAL DATA MOVE (00h-35h) Operation
Figure 51: READ FOR INTERNAL DATA MOVE (00h–35h) with RANDOM DATA READ (05h–E0h)
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
Cycle type
Cycle type
Cycle type
I/O[7:0]
I/O[7:0]
I/O[7:0]
RDY
RDY
RDY
Command
1
Command
00h
Command
00h
05h
Address
Address
C1
Address
The READ FOR INTERNAL DATA MOVE (00h-35h) command is functionally identical to
the READ PAGE (00h-30h) command, except that 35h is written to the command regis-
ter instead of 30h.
Though it is not required, it is recommended that the host read the data out of the de-
vice to verify the data prior to issuing the PROGRAM FOR INTERNAL DATA MOVE
(85h-10h) command to prevent the propagation of data errors.
If internal ECC is enabled, the data does not need to be toggled out by the host to be
corrected and moving data can then be written to a new page without data reloading,
which improves system performance.
C1
C1
Address
Address
Address
C2
C2
C2
Address
Address
Command
R1
R1
E0h
Address
Address
t
WHR
R2
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
R2
80
Address
Address
R3
R3
D
Dk
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Command
Command
Dk + 1
D
35h
35h
OUT
Internal Data Move Operations
t
t WB
WB
Dk + 2
D
OUT
t
R
t R
t
RR
t RR
© 2009 Micron Technology, Inc. All rights reserved.
D
D0
OUT
D
D n
OUT
D
…
OUT
D
D n+1
OUT
Dj + n
D
OUT
D
D n+2
OUT
1