H5PS5162FFR-S6C HYNIX SEMICONDUCTOR, H5PS5162FFR-S6C Datasheet - Page 12

• Manufacturer Part Number: H5PS5162FFR-S6C
• Description: 58T1896
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5PS5162FFR-S6C

• Memory Type: SDRAM
• Memory Configuration: 32M X 16
• Memory Case Style: FBGA
• No. Of Pins: 84
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 512 Mbit
• Voltage Vcc: 1.8V
• Rohs Compliant: Yes

Rev. 1.0 / July. 2008
3.3 Output Buffer Characteristics
3.3.1 Output AC Test Conditions
3.3.2 Output DC Current Drive
1.
2.
3.
4.
1. The VDDQ of the device under test is referenced.
Symbol
Symbol
I
I
V
OH(dc)
OL(dc)
V
and V
V
mV.
The dc value of V
The values of I
device drive current capability to ensure V
delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating
point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement.
OTR
DDQ
DDQ
= 1.7 V; V
DDQ
= 1.7 V; V
Output Timing Measurement Reference Level
Output Minimum Source DC Current
Output Minimum Sink DC Current
- 280 mV.
OH(dc)
OUT
OUT
REF
= 1420 mV. (V
= 280 mV. V
applied to the receiving device is set to V
and I
OL(dc)
Parameter
Parameter
are based on the conditions given in Notes 1 and 2. They are used to test
OUT
OUT
/I
OL
- V
must be less than 21 ohm for values of V
IH
DDQ
min plus a noise margin and V
)/I
OH
must be less than 21 ohm for values of V
TT
SSTL_18 Class II
0.5 * V
SSTl_18
- 13.4
13.4
IL
DDQ
max minus a noise margin are
H5PS5162FFR series
OUT
between 0 V and 280
Units
Units
mA
mA
OUT
V
between V
Release
Notes
1, 3, 4
2, 3, 4
Notes
1
DDQ
12