BUK9520-100B NXP Semiconductors, BUK9520-100B Datasheet - Page 7

• Manufacturer Part Number: BUK9520-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9520-100B_1
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DS on
120
(A)
50
40
30
20
10
I
90
60
30
D
0
function of gate-source voltage; typical values.
of drain current; typical values.
Transfer characteristics: drain current as a
0
0
2.5
2.7
30
1
3
T
60
j
= 150 °C
2
3.2
90
3.4
V
GS
3
25 °C
120
(V) =
003a a c776
003a a c773
V
GS
I
D
(V)
4.5
10
(A)
150
4
Rev. 01 — 6 May 2009
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
1.5
0.5
2
1
0
3
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9520-100B
60
60
max
typ
min
120
120
© NXP B.V. 2009. All rights reserved.
T
03aa33
03aa29
T
j
j
( ° C)
( ° C)
180
180
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