BUK9520-100B NXP Semiconductors, BUK9520-100B Datasheet - Page 8

• Manufacturer Part Number: BUK9520-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9520-100B_1
Product data sheet
Fig 13. Source current as a function of source drain
Fig 15. Gate-source voltage as a function of turn-on
(A)
120
I
V
(V)
S
90
60
30
GS
5
4
3
2
1
0
0
voltage; typical values.
gate charge; typical values.
0
0
T
j
= 25 ° C
V
150 °C
DS
0.5
= 14V
20
1
T
j
= 25 °C
40
V
DS
1.5
= 80V
Q
003a a c778
003a a c777
V
G
S D
(nC)
(V)
60
2
Rev. 01 — 6 May 2009
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
10
10
10
C
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
N-channel TrenchMOS logic level FET
Q
GS1
1
I
Q
D
GS
BUK9520-100B
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aaa508
003a a c775
C
C
C
(V)
rs s
os s
is s
10
2
8 of 12