BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet - Page 6

• Manufacturer Part Number: BLF6G22L-40BN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22L-40BN
Product data sheet
Fig 8.
(dB)
G
p
21
20
19
18
17
16
15
14
0
V
Power gain and drain efficiency as function of
load power; typical values
DS
= 28 V; I
G
D
p
7.5 1-Carrier IS-95
2
Dq
= 345 mA; f = 2140 MHz.
4
Fig 10. Peak-to-average power ratio as a function of load power; typical values
6
V
DS
= 28 V; I
All information provided in this document is subject to legal disclaimers.
8
001aam464
P
L
(W)
Dq
PAR
= 345 mA; f = 2140 MHz.
10
Rev. 1 — 30 August 2010
11
10
35
30
25
20
15
10
5
0
9
8
7
6
5
0
(%)
D
2
Fig 9.
ACPR
(dBc)
30
40
50
60
70
80
4
0
V
ACPR at 885 kHz and at 1980 kHz as function
of load power; typical values
DS
= 28 V; I
6
2
Dq
BLF6G22L-40BN
8
= 345 mA; f = 2140 MHz.
001aam466
P
4
L
(W)
10
Power LDMOS transistor
6
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
1980k
8
885k
001aam465
P
L
(W)
10
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