BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet - Page 9

• Manufacturer Part Number: BLF6G22L-40BN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Package outline
Fig 14. Package outline SOT1112A
BLF6G22L-40BN
Product data sheet
Flanged ceramic package; 2 mounting holes; 6 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1112A
Outline
version
(1)
max
nom
max
nom
min
min
H
0.183
0.148
4.65
3.76
A
U
A
2
0.045
0.035
1.14
0.89
b
A
Z
0.207
0.197
5.26
5.00
IEC
b
1
0.007
0.004
0.18
0.10
c
4
6
b
L
9.65
9.40
0.38
0.37
D
JEDEC
9.65
9.40
0.38
0.37
All information provided in this document is subject to legal disclaimers.
D
1
D
U
b
9.65
9.40
0.38
0.37
References
D
q
1
2
1
1
1
E
Rev. 1 — 30 August 2010
0
9.65
9.40
0.38
0.37
E
1
JEITA
0.045
0.035
1.14
0.89
w
F
2
scale
5
5
7
17.12
16.10
0.674
0.634
C
H
3
0.118
0.106
3.00
2.69
L
10 mm
C
F
B
p
0.130
0.115
3.30
2.92
p
w
1
0.067
0.057
1.70
1.45
Q
A
(2)
BLF6G22L-40BN
15.24
B
0.6
q
20.45
20.19
0.805
0.795
European
projection
U
1
E
1
Power LDMOS transistor
9.91
9.65
0.39
0.38
U
2
Q
0.25
0.01
w
1
© NXP B.V. 2010. All rights reserved.
c
0.51
0.02
w
2
Issue date
09-10-12
10-02-02
E
0.235
0.225
5.97
5.72
sot1112a_po
Z
SOT1112A
64
62
64
62
9 of 13