BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet - Page 8

• Manufacturer Part Number: BLF6G22L-40BN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22L-40BN
Product data sheet
7.8 Impedance information
Table 9.
Typical values valid for both section in parallel unless otherwise specified.
f
(MHz)
2050
2140
2230
Fig 12. Component layout for class-AB production test circuit
Fig 13. Definition of transistor impedance
NXP BLF6G22L_40BN
Printed-Circuit Board (PCB): Taconic RF-35A; ε
thickness copper plating = 35 μm.
See
Typical impedance
Table 8
All information provided in this document is subject to legal disclaimers.
C6
for a list of components.
R1
Rev. 1 — 30 August 2010
Input
R2
C3
R3
Z
(Ω)
3.3 − j12.2
4.5 − j12.8
10 − j15.3
S
gate
Z
S
C5
C10
r
C11
= 3.5 F/m; thickness = 0.765 mm;
C15
001aal831
drain
BLF6G22L-40BN
Z
L
Z
(Ω)
13 − j11.2
12.2 − j6.9
13.3 − j5.5
L
Power LDMOS transistor
C9
NXP
BLF6G22L_40BN
Output
© NXP B.V. 2010. All rights reserved.
C13
C12
C8
001aam468
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