BLF6G22LS-40P NXP Semiconductors, BLF6G22LS-40P Datasheet - Page 4

• Manufacturer Part Number: BLF6G22LS-40P
• Description: LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22L-40P_6G22LS-40P
Product data sheet
7.2 CW
Fig 1.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
V
Power gain and drain efficiency as function of load power; typical values
DS
= 28 V; I
All information provided in this document is subject to legal disclaimers.
BLF6G22L-40P; BLF6G22LS-40P
Dq
Rev. 1 — 22 September 2011
(dB)
G
= 410 mA.
p
30
20
10
0
28
(1)
G
η
D
p
(2)
36
(3)
(1)
(2)
(3)
44
P
L
aaa-000328
(dBm)
52
Power LDMOS transistor
60
40
20
0
(%)
η
D
© NXP B.V. 2011. All rights reserved.
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