BLF6G22LS-40P NXP Semiconductors, BLF6G22LS-40P Datasheet - Page 8

• Manufacturer Part Number: BLF6G22LS-40P
• Description: LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLF6G22L-40P_6G22LS-40P
Product data sheet
Table 8.
See
[1]
[2]
Component
C1, C2, C9,
C10
C3, C4, C11,
C12
C5, C8
C6, C14, C15
C13
R1, R2
Fig 10. Component layout
60.0 mm
American Technical Ceramics type 800B or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
Figure 10
Printed-Circuit Board (PCB): Rogers RO4350; 
thickness copper plating = 35 m.
The vias can be as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more
appropriate application demonstration for specific customer needs can be provided.
See
List of components
Table 8
for component layout.
All information provided in this document is subject to legal disclaimers.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
C6
BLF6G22L-40P; BLF6G22LS-40P
for list of components.
Rev. 1 — 22 September 2011
C4
C3
50.0 mm
R1
R2
C5
C2
C1
r
= 3.5 F/m; thickness = 0.762 mm;
Value
68 pF
820 pF
4.7 pF
10 F
470 F; 63 V
12 
C10
C9
Power LDMOS transistor
50.0 mm
C11
C12
[1]
[2]
[1]
C15
C14
© NXP B.V. 2011. All rights reserved.
C8
Remarks
TDK
Philips 1206
C13
aaa-000337
8 of 16