BLF6G22LS-40P NXP Semiconductors, BLF6G22LS-40P Datasheet - Page 5

• Manufacturer Part Number: BLF6G22LS-40P
• Description: LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G22L-40P_6G22LS-40P
Product data sheet
Fig 2.
(dB)
G
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
p
22
20
18
16
14
12
28
V
Single carrier IS-95 power gain and drain
efficiency as function of output power; typical
values
DS
= 28 V; I
32
7.3 IS-95
G
η
(1)
D
p
Dq
(2)
= 410 mA.
Single carrier IS-95; PAR = 9.7 dB at 0.01 % probability on the CCDF.
(1)
36
(3)
(2)
(3)
40
44
All information provided in this document is subject to legal disclaimers.
aaa-000329
P
L
(dBm)
BLF6G22L-40P; BLF6G22LS-40P
Rev. 1 — 22 September 2011
48
50
40
30
20
10
0
(%)
η
D
Fig 3.
ACPR
(dBc)
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
-20
-40
-60
-80
885
28
V
Single carrier IS-95 adjacent channel power
ratio as a function of output power;
typical values
DS
ACPR
= 28 V; I
32
885
(1)
Dq
(2)
= 410 mA.
36
(3)
(1)
Power LDMOS transistor
40
(2)
(3)
ACPR
© NXP B.V. 2011. All rights reserved.
44
aaa-000330
P
L
(dBm)
1980
48
ACPR
-20
-40
-60
-80
(dBc)
5 of 16
1980