STM8S103F3 STMicroelectronics, STM8S103F3 Datasheet - Page 89

• Manufacturer Part Number: STM8S103F3
• Description: Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM
• Manufacturer: STMicroelectronics

Specifications of STM8S103F3

• Program Memory: 8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcycles
• Data Memory: 640 bytes true data EEPROM; endurance 300 kcycles
• Ram: 1 Kbytes
• Advanced Control Timer: 16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization

STM8S103K3 STM8S103F3 STM8S103F2
10.3.11.4
10.3.11.5
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, DLU and LU) using specific measurement methods, the
product is stressed to determine its performance in terms of electrical sensitivity. For more
details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied
to the pins of each sample according to each pin combination. The sample size depends on
the number of supply pins in the device (3 parts*(n+1) supply pin). One model can be simulated:
Human body model. This test conforms to the JESD22-A114A/A115A standard. For more
details, refer to the application note AN1181.
Symbol
Symbol
(1)
V
V
ESD(HBM)
ESD(CDM)
Data based on characterisation results, not tested in production.
Parameter
SAE EMI
level
Ratings
Electrostatic discharge
voltage
(Human body model)
Electrostatic discharge
voltage
(Charge device model)
Table 50: ESD absolute maximum ratings
Conditions
General
conditions
Conforming to
SAE IEC
61967-2
DocID15441 Rev 7
Conditions
T
JESD22-A114
T
25°C, conforming to
SD22-C101
Monitored
frequency band
130 MHz
130 MHz to
1 GHz
SAE EMI level
A
A
= 25°C, conforming to
LQFP32 package =
Max f
16 MHz/
8 MHz
5
2.5
HSE
Electrical characteristics
Class
/f
A
IV
16 MHz/
16 MHz
CPU
5
2.5
(1)
Maximum
value
4000
1000
(1)
Unit
89/113
Unit
V