PHE13005X NXP Semiconductors, PHE13005X Datasheet - Page 3

• Manufacturer Part Number: PHE13005X
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 4.
6. Isolation characteristics
Table 5.
T
PHE13005X_1
Product data sheet
Symbol
R
R
Symbol
V
C
h
isol(RMS)
th(j-h)
th(j-a)
isol
= 25 C unless otherwise specified.
Thermal characteristics
Isolation limiting values and characteristics
Parameter
thermal resistance from junction to heatsink
thermal resistance from junction to ambient
Parameter
RMS isolation voltage
isolation capacitance
Fig 2.
Transient thermal impedance from junction to heatsink as a function of pulse
duration
Conditions
from all three terminals to external
heatsink; f = 50 Hz to 60 Hz; sinusoidal
waveform; relative humidity
and dust free
from pin 2 to external heatsink; f = 1 MHz
Z
(K/W)
th(j-h)
10
10
10
Rev. 01 — 15 May 2008
10
1
1
2
3
10
0.2
0.1
0.05
0.02
0
6
= 0.5
10
Conditions
with heatsink compound;
see
in free air
5
10
Figure 2
4
10
65 %; clean
3
10
2
P
10
1
t
p
1/f
1
Silicon diffused power transistor
Min
-
-
001aag169
10
t
=
p
Min
-
-
1/f
(s)
t
t
p
10
2
PHE13005X
Typ
-
10
Typ
-
55
© NXP B.V. 2008. All rights reserved.
Max
2500
-
Max
4.8
-
Unit
K/W
K/W
Unit
V
pF
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