PHE13005X NXP Semiconductors, PHE13005X Datasheet - Page 4

• Manufacturer Part Number: PHE13005X
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 6.
T
[1]
PHE13005X_1
Product data sheet
Symbol Parameter
Static characteristics
I
I
I
I
V
V
V
h
Dynamic characteristics
t
t
CES
CBO
CEO
EBO
s
f
mb
FE
CEOsus
CEsat
BEsat
= 25 C; unless otherwise specified.
Measured with half sine-wave voltage (curve tracer).
collector-emitter cut-off current
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
DC current gain
storage time
fall time
Characteristics
Conditions
V
V
V
V
V
I
see
I
I
I
I
I
I
I
Resistive load; I
I
V
Inductive load; I
V
Resistive load; I
I
V
Inductive load; I
V
B
C
C
C
C
C
C
C
Bon
Bon
BE
BE
BE
CEO
EB
CC
BE
CC
BE
I
I
I
I
= 0 A; I
= 1 A; I
= 2 A; I
= 4 A; I
= 1 A; I
= 2 A; I
= 1 A; V
= 2 A; V
Bon
Bon
Bon
Bon
Figure 3
= I
= I
= 0 V; V
= 0 V; V
= 0 V; V
= 9 V; I
= 5 V; see
= 5 V; I
= 250 V; see
= 250 V; see
= V
= 0.4 A
= 0.4 A; T
= 0.4 A
= 0.4 A; T
Rev. 01 — 15 May 2008
Boff
Boff
CEO(max)
C
B
B
B
B
B
CE
CE
= 10 mA; L
= 0.2 A; see
= 0.5 A; see
= 1 A; see
= 0.2 A
= 0.5 A; see
C
= 0.4 A; R
= 0.4 A; R
CE
CE
CE
Bon
and
= 0 A
= 5 V; see
= 5 V; see
= V
= V
= V
Con
Con
Con
Con
Figure 7
j
= 0.4 A; see
j
= 100 C
= 100 C
4
= 400 V
Figure 5
Figure 5
CESM
CESM
CESM
= 2 A; L
= 2 A; L
= 2 A;
= 2 A;
L
L
Figure 10
C
= 75 ;
= 75 ;
; T
= 25 mH;
Figure 10
Figure 10
Figure 11
Figure 9
Figure 9
and
j
and
and
B
B
= 100 C
= 1 H;
= 1 H;
Figure 7
8
6
6
and
and
12
and
12
Silicon diffused power transistor
8
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
400
-
-
-
-
-
10
8
-
-
-
-
-
-
PHE13005X
Typ
-
-
-
-
-
-
0.1
0.2
0.3
0.85
0.92
20
17
2.7
1.2
1.4
0.3
0.1
0.16
© NXP B.V. 2008. All rights reserved.
Max
1
5
1
0.1
1
-
0.5
0.6
1
1.2
1.6
60
40
4
2
4
0.9
0.5
0.9
Unit
mA
mA
V
V
V
V
V
V
mA
mA
mA
4 of 12
s
s
s
s
s
s