PHE13005X NXP Semiconductors, PHE13005X Datasheet - Page 8

• Manufacturer Part Number: PHE13005X
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Package information
PHE13005X_1
Product data sheet
Fig 15. Forward bias safe operating area
I
CM(max)
I
C(max)
(A)
I
10
10
10
(1) P
(2) Second breakdown limits.
(3) Region of permissible DC operation.
(4) Extension of operating region for repetitive pulse operation.
(5) Extension of operating region during turn-on in single transistor converters provided that R
C
10
10
1
2
1
2
3
1
T
Mounted with heatsink compound and (30
h
tot
maximum and P
25 C.
Epoxy meets requirements of UL94 V-0 at 3.175 mm.
tot
peak maximum lines.
10
(3)
5) N force on the center of the envelope.
Rev. 01 — 15 May 2008
(1)
duty cycle = 0.01
10
2
Silicon diffused power transistor
(2)
BE
(4)
V
CL(CE)
100
PHE13005X
(V)
50 s
100 s
200 s
500 s
t
DC
p
and t
= 20 s
(5)
© NXP B.V. 2008. All rights reserved.
p
001aai071
0.6 s.
10
3
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