PHE13005X NXP Semiconductors, PHE13005X Datasheet - Page 7

• Manufacturer Part Number: PHE13005X
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHE13005X_1
Product data sheet
Fig 11. Base-emitter saturation voltage; typical values
Fig 13. Test circuit for reverse bias safe operating
V
BEsat
(V)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
I
V
L
area
C
B
CL(CE)
1
I
V
/I
Bon
BB
= 1 H; L
B
= 4
1000 V; V
C
= 200 H
L
B
CC
1
= 150 V; V
L
C
V
CC
DUT
I
C
BB
V
probe point
(A)
CL(CE)
001aab999
= 5 V;
001aab996
10
Rev. 01 — 15 May 2008
Fig 12. Collector-emitter saturation voltage as a
Fig 14. Reverse bias safe operating area
V
CEsat
(V)
(A)
I
C
0.5
0.4
0.3
0.2
0.1
0
8
6
4
2
0
10
I
function of collector current; typical values
0
T
C
j
1
/I
B
V
T
= 4
BE
j(max)
= 5V
200
Silicon diffused power transistor
400
1
PHE13005X
I
C
600
(A)
© NXP B.V. 2008. All rights reserved.
V
CL(CE)
001aab997
001aaf009
(V)
800
10
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