MT28F160A3 Micron Technology, MT28F160A3 Datasheet - Page 2

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MT28F160A3

Manufacturer Part Number
MT28F160A3
Description
FLASH MEMORY
Manufacturer
Micron Technology
Datasheet

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DataSheet
ARCHITECTURE
rameter blocks and thirty-one 32K-word blocks. The first
two 4K-word blocks are called boot blocks and are locked
with WP# control. Memory is organized by using a blocked
architecture to allow independent erasure of selected
memory blocks. Any address within a block address range
selects that block for the required READ, WRITE, or ERASE
operation (see Figures 1 and 2).
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
A0–A19
4
WE#
OE#
RP#
CE#
U
The MT28F160A3 flash contains eight 4K-word pa-
.com
DQ0–DQ15
Data Input
I/O Logic
Address
Buffer
Buffer
WSM
Input
CSM
Address Latch
Pump Voltage
Erase Change
CNT WSM
Program/
Register
Address
Control
Switch
Data
APS
FUNCTIONAL BLOCK DIAGRAM
ENHANCED BOOT BLOCK FLASH MEMORY
Multiplexer
Address
DataSheet4U.com
2
NOTE: 1. The mechanical sample marking is FY310.
PART NUMBER
MT28F160A3FD-9 BET
MT28F160A3FD-9 TET
MT28F160A3FD-11 BET
MT28F160A3FD-11 TET
Y/Z DEC
Y/Z DEC
X DEC
X DEC
Cross Reference for Abbreviated
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Y/Z Gating/Sensing
Y/Z Gating/Sensing
Bank b Blocks
Bank a Blocks
Device Marks
Comparator
Table 1
Data
MARKING
PRODUCT
Status
Reg.
Reg.
Multiplexer
FW310
FW311
FW312
FW313
ID
Output
1 MEG x 16
1
©2001, Micron Technology, Inc.
ADVANCE
MARKING
SAMPLE
FX310
FX311
FX312
FX313
DQ0–DQ15
Output
Buffer

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