MT28F160A3 Micron Technology, MT28F160A3 Datasheet - Page 4

• Manufacturer Part Number: MT28F160A3
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
TRUTH TABLE
NOTE: 1. L = V
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
4
Standby
RESET
READ
Output Disable
ERASE SETUP
ERASE CONFIRM
WRITE SETUP
WRITE
READ ARRAY
ERASE SETUP
ERASE CONFIRM
WRITE SETUP
WRITE
READ ARRAY
Manufacturer
Device (top boot)
Device (bottom boot)
U
.com
FUNCTION
READING
WRITE/ERASE (EXCEPT BOOT BLOCKS)
WRITE/ERASE (BOOT BLOCKS)
DEVICE IDENTIFICATION
2. V
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. See Table 3 for the IDENTIFY DEVICE command.
4
4
PPH
= 2.7V–3.3V for ERASE, and V
IL
5
5
(LOW), H = V
1
3
3
IH
(HIGH), X = V
6
2
PPH
IL
or V
= 2.7V–3.3V or 5V for WRITE.
2
ENHANCED BOOT BLOCK FLASH MEMORY
IH
(“Don’t Care”).
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RP#
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
4
CE#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OE#
Micron Technology, Inc., reserves the right to change products or specifications without notice.
H
H
H
H
H
H
H
H
H
H
H
X
X
L
L
L
L
WE#
X
X
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
WP#
X
X
X
X
X
X
X
X
X
X
H
X
H
X
X
X
X
V
V
V
V
V
X
X
X
X
X
PPH
X
PPH
X
X
PPH
X
PPH
X
X
X
X
PP
A0
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
1 MEG x 16
Data-Out Data-Out
10H/40H
10H/40H
DQ0-DQ7 DQ8-DQ15
Data-In Data-In
Data-In Data-In
High-Z
High-Z
High-Z
D0H
D0H
2CH
©2001, Micron Technology, Inc.
20H
20H
90H
91H
FFH
FFH
ADVANCE
High-Z
High-Z
High-Z
00H
44H
44H
X
X
X
X
X
X
X
X