MT28F160A3 Micron Technology, MT28F160A3 Datasheet - Page 23

• Manufacturer Part Number: MT28F160A3
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND
RECOMMENDED AC OPERATING CONDITIONS:
WE# (CE#)-CONTROLLED WRITES
(-40°C
NOTE: 1. Polling status register before
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
4
AC CHARACTERISTICS
PARAMETER
WE# (CE#) HIGH pulse width
WE# (CE#) pulse width
Address setup time to WE# (CE#) HIGH
Address hold time from WE# (CE#) HIGH
Data setup time to WE# (CE#) HIGH
Data hold time from WE# (CE#) HIGH
CE# (WE#) setup time to WE# (CE#) LOW
CE# (WE#) hold time from WE# (CE#) HIGH
V
RP# HIGH to WE# (CE#) LOW delay
WRITE duration
Boot BLOCK ERASE duration
Parameter BLOCK ERASE duration
Main BLOCK ERASE duration
V
WE# (CE#) HIGH to busy status (SR7 = 0)
PP
PP
U
setup time to WE# (CE#) HIGH
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hold time from status data valid
2.
T
t
A
WB = 800ns (MAX).
+85°C; V
CC
= 2.7V–3.3V)
t
WB is met may falsely indicate WRITE or ERASE completion.
ENHANCED BOOT BLOCK FLASH MEMORY
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23
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
WPH (
t
SYMBOL
t
t
CH (
WP (
CS (
t
t
t
t
WED1
WED2
WED3
WED4
t
t
t
t
t
t
t
VPH
VPS
t
WB
AH
DH
AS
DS
RS
t
t
WS)
WH)
t
t
CPH)
CP)
MIN
200
600
200
0.5
0.5
30
70
70
50
-9
0
0
0
0
6
1
0
MIN
200
600
200
-11
0.5
0.5
30
70
70
60
0
0
0
0
6
1
0
1 MEG x 16
©2001, Micron Technology, Inc.
UNITS
ADVANCE
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s
s
NOTES
1, 2