MT28F160A3 Micron Technology, MT28F160A3 Datasheet - Page 3

• Manufacturer Part Number: MT28F160A3
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
BALL DESCRIPTIONS
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
46-BALL FBGA
1A, 1B, 1C, 1D,
2A, 2B, 2C, 3A,
3C, 5B, 6A, 6B,
6C, 7A, 7B, 7C,
2D, 2E, 2F, 3D, DQ0-DQ15
4F, 5D, 5E, 6D,
8A, 8B, 8C, 8D
3E, 3F, 4D, 4E,
4
6E, 6F, 7E, 7F
NUMBERS
U
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1F, 8E
3B
5A
7D
4B
4A
8F
5F
1E
SYMBOL
A0-A19
V
WE#
WP#
OE#
CE#
RP#
V
V
V
CC
CC
PP
SS
Q
Output
Supply
Supply
Supply
Supply
Input/
TYPE
Input
Input
Input
Input
Input
Input
Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is
LOW, the cycle is either a WRITE to the command state machine (CSM)
or to the memory array.
Write Protect: Unlocks the boot blocks when HIGH if V
or 5V (WRITE only) and RP# = V
WRITE or ERASE operation on other blocks.
Chip Enable: Activates the device when LOW. When CE# is HIGH, the
device is disabled and goes into standby power mode.
Reset/Power-Down: When LOW, RP# clears the status register, sets the
write state machine (WSM) to the array read mode and places the
device in deep power-down mode. All inputs, including CE#, are
“Don’t Care,” and all outputs are High-Z. RP# must be held at V
during all other modes of operation.
Output Enable: Enables data output buffers when LOW. When OE# is
HIGH, the output buffers are disabled.
Address Inputs: These address inputs select a unique, 16-bit word out
of the 1,048,576 available.
Data I/O: These data I/O are data output lines during any READ
operation or data input lines during a WRITE. Data I/O are used to
input commands to the CSM.
Write/Erase Supply Voltage: From a WRITE or ERASE CONFIRM until
completion of the operation, V
only). V
Power Supply: 2.7V–3.3V.
I/O Supply Voltage: 2.7V–3.3V.
Ground.
ENHANCED BOOT BLOCK FLASH MEMORY
DataSheet4U.com
PP
= “Don’t Care” during all other operations.
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DESCRIPTION
PP
IH
must be 2.7V–3.3V or 5V (WRITE
for WRITE or ERASE. Does not affect
1 MEG x 16
PP
©2001, Micron Technology, Inc.
= 2.7V–3.3V
ADVANCE
IH