K15N120 Infineon Technologies, K15N120 Datasheet - Page 10

• Manufacturer Part Number: K15N120
• Description: FAST IGBT IN NPT-TECHNOLOGY
• Manufacturer: Infineon Technologies

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Power Semiconductors
Figure 25. Typical diode forward current as
a function of forward voltage
10
10
50A
40A
30A
20A
10A
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = t
10
0A
-1
-2
0
0V
K/W
K/W
K/W
10µs
p
/ T)
0.05
0.2
0.1
D =0.5
single pulse
V
100µs
1V
F
,
t
FORWARD VOLTAGE
p
,
TJ=150°C
PULSE WIDTH
1ms
2V
R
0.09709
0.50859
0.36316
0.53106
R , ( K / W )
1
C
1
=
10ms
1
T
/R
J
1
=25°C
3V
C
0.40049
0.09815
0.00612
0.00045
100ms
2
=
, ( s )
2
/R
R
2
2
4V
1s
10
Figure 26. Typical diode forward voltage as
a function of junction temperature
3.0V
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0°C
T
j
,
JUNCTION TEMPERATURE
40°C
SKW15N120
80°C
Rev. 2_2
120°C
I
F
I
I
=7.5A
F
F
=15A
=30A
Sep 08