K15N120 Infineon Technologies, K15N120 Datasheet - Page 9

• Manufacturer Part Number: K15N120
• Description: FAST IGBT IN NPT-TECHNOLOGY
• Manufacturer: Infineon Technologies

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Power Semiconductors
Figure 21. Typical reverse recovery time as
a function of diode current slope
(V
dynamic test circuit in Fig.E )
Figure 23. Typical reverse recovery current
as a function of diode current slope
(V
dynamic test circuit in Fig.E )
400ns
350ns
300ns
250ns
200ns
150ns
100ns
R
R
50ns
30A
25A
20A
15A
10A
0ns
= 800V, T
= 800V, T
5A
0A
200A/ s
200A/ s
d i
d i
F
F
/d t,
/d t,
I
j
j
400A/ s
400A/ s
F
= 150 C,
= 150 C,
=7.5A
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
I
F
=7.5A
600A/ s
600A/ s
I
F
=15A
800A/ s
800A/ s
I
F
=15A
1000A/ s
1000A/ s
9
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(V
dynamic test circuit in Fig.E )
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(V
dynamic test circuit in Fig.E )
400A/ s
300A/ s
200A/ s
100A/ s
2.5µC
2.0µC
1.5µC
1.0µC
0.5µC
0.0µC
R
0A/ s
R
= 800V, T
= 800V, T
200A/ s
200A/ s 400A/ s 600A/ s 800A/ s 1000A/ s
d i
di
F
F
/d t,
/dt,
400A/ s
j
j
= 150 C,
= 150 C,
DIODE CURRENT SLOPE
I
DIODE CURRENT SLOPE
F
=7.5A
SKW15N120
600A/ s
I
F
=15A
I
F
=7.5A
Rev. 2_2
800A/ s
I
F
=15A
1000A/ s
Sep 08