K15N120 Infineon Technologies, K15N120 Datasheet - Page 5

• Manufacturer Part Number: K15N120
• Description: FAST IGBT IN NPT-TECHNOLOGY
• Manufacturer: Infineon Technologies

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Power Semiconductors
50A
40A
30A
20A
10A
Figure 7. Typical transfer characteristics
(V
50A
40A
30A
20A
10A
0A
0A
Figure 5. Typical output characteristics
(T
CE
3V
0V
j
= 25 C)
= 20V)
V
T
CE
J
=-40°C
T
1V
V
V
,
J
=+25°C
GE
COLLECTOR
G E
,
=17V
5V
15V
13V
11V
T
GATE
9V
7V
2V
J
=+150°C
-
EMITTER VOLTAGE
3V
-
EMITTER VOLTAGE
7V
4V
5V
9V
6V
11V
7V
5
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
50A
40A
30A
20A
10A
Figure 6. Typical output characteristics
(T
0A
GE
6V
5V
4V
3V
2V
1V
0V
0V
j
-50°C
= 150 C)
= 15V)
V
CE
1V
V
,
T
COLLECTOR
G E
j
,
JUNCTION TEMPERATURE
=17V
15V
13V
11V
0°C
9V
7V
2V
SKW15N120
3V
-
50°C
EMITTER VOLTAGE
4V
Rev. 2_2
100°C
5V
I
6V
I
C
I
150°C
C
C
=7.5A
=30A
=15A
Sep 08
7V