K15N120 Infineon Technologies, K15N120 Datasheet - Page 6

• Manufacturer Part Number: K15N120
• Description: FAST IGBT IN NPT-TECHNOLOGY
• Manufacturer: Infineon Technologies

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Power Semiconductors
1000ns
100ns
Figure 9. Typical switching times as a
function of collector current
(inductive load, T
V
dynamic test circuit in Fig.E )
1000ns
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V
V
dynamic test circuit in Fig.E )
10ns
100ns
CE
GE
10ns
= 8600V, V
= +15V/0V, I
-50°C
0A
t
t
f
r
T
j
I
,
C
JUNCTION TEMPERATURE
,
t
10A
d(off)
COLLECTOR CURRENT
0°C
t
r
GE
C
j
CE
= 150 C,
= +15V/0V, R
t
t
= 15A, R
f
t
d(off)
d(on)
= 800V,
20A
50°C
t
d(on)
G
30A
= 33 ,
100°C
G
= 3 3 ,
40A
150°C
6
1000ns
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T
V
dynamic test circuit in Fig.E )
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I
100ns
C
CE
10ns
6V
5V
4V
3V
2V
1V
0V
= 0.3mA)
-50°C
= 800V, V
0
T
t
j
f
,
JUNCTION TEMPERATURE
0°C
t
R
GE
r
G
,
= +15V/0V, I
j
GATE RESISTOR
= 150 C,
25
SKW15N120
50°C
t
d(off)
t
d(on)
C
Rev. 2_2
100°C
= 15A,
50
150°C
max.
min.
Sep 08
typ.