PHP54N06T Philips Semiconductors, PHP54N06T Datasheet - Page 5

• Manufacturer Part Number: PHP54N06T
• Description: N-channel enhancement mode field-effect transistor
• Manufacturer: Philips Semiconductors

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 08022
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
j
d
s
(BR)DSS
GS(th)
DSon
g(tot)
gs
gd
iss
oss
rss
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
Conditions
I
Figure 9
V
V
V
Figure 7
V
V
V
f = 1 MHz;
V
V
from drain lead 6 mm from
package to centre of die
from contact screw on
mounting base to centre of
die
from source lead to source
bond pad
D
D
DS
GS
GS
DD
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.25 mA; V
= 1 mA; V
j
j
j
j
j
j
j
j
j
= 55 V; V
= 25 C
= 55 C
= 25 C
= 175 C
= 55 C
= 25 C
= 175 C
= 20 V; V
= 10 V; I
= 25 C
= 175 C
= 44 V; I
= 10 V;
= 0 V; V
= 30 V; R
= 10 V; R
Rev. 01 — 14 February 2001
and
Figure 12
Figure 14
DS
DS
D
D
8
GS
L
G
= 25 A;
= 40 A;
DS
= V
GS
= 25 V;
= 1.2 ;
= 10 ;
= 0 V
= 0 V
= 0 V
N-channel enhancement mode field-effect transistor
GS
;
Min
55
50
2
1
Typ
3
0.05
2
17
36
8.4
11.5
1200
290
179
15
74
70
40
4.5
3.5
7.5
© Philips Electronics N.V. 2001. All rights reserved.
PHP54N06T
Max
4
4.4
10
500
100
20
40
1592
356
240
Unit
V
V
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
5 of 13
A
A