PHP54N06T Philips Semiconductors, PHP54N06T Datasheet - Page 8

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PHP54N06T

Manufacturer Part Number
PHP54N06T
Description
N-channel enhancement mode field-effect transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
9397 750 08022
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
(A)
I D
120
100
80
60
40
20
0
0
2
4
T j = 25 o C
6
T j = 175 o C
(A)
I S
8
V GS (V)
120
100
80
60
40
20
0
03nc61
0.0
Rev. 01 — 14 February 2001
10
0.5
T j = 175 o C
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of turn-on
T
1.0
j
= 25 C; I
gate charge; typical values.
T j = 25 o C
V GS
V SD (V)
(V)
10
8
6
4
2
0
03nc58
0
D
= 40 A
1.5
5
10
V DD = 11 V
15
20
© Philips Electronics N.V. 2001. All rights reserved.
PHP54N06T
V DD = 44 V
25
30
Q G (nC)
003aaa068
35
40
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