PHP54N06T Philips Semiconductors, PHP54N06T Datasheet - Page 7

• Manufacturer Part Number: PHP54N06T
• Description: N-channel enhancement mode field-effect transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
9397 750 08022
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(S)
(V)
25
20
15
10
5
0
4.5
3.5
2.5
1.5
0.5
0
5
4
3
2
1
0
-60
DS
DS
= V
= 25 V
-20
GS
20
20
40
60
max.
typ.
min
100
60
T j ( o C)
I D (A)
140
03nc60
03aa32
Rev. 01 — 14 February 2001
80
180
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
gate-source voltage.
as a function of drain-source voltage; typical
values.
C iss ,
C oss,
C rss
(pF)
= 0 V; f = 1 MHz
(A)
I D
2500
2000
1500
1000
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
500
0
10 -2
0
DS
= V
GS
1
10 -1
2
min
© Philips Electronics N.V. 2001. All rights reserved.
PHP54N06T
1
3
C iss
C oss
C rss
typ
V GS (V)
10
4
V DS (V)
max
03aa35
10 2
5
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