PHP54N06T Philips Semiconductors, PHP54N06T Datasheet - Page 6

• Manufacturer Part Number: PHP54N06T
• Description: N-channel enhancement mode field-effect transistor
• Manufacturer: Philips Semiconductors

Table 5:
T
Philips Semiconductors
9397 750 08022
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
(A)
function of drain-source voltage; typical values.
of drain current; typical values.
I D
R DSon
Characteristics
(m )
200
180
160
140
120
100
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
80
60
40
20
0
45
40
35
30
25
20
15
0
0
p
= 300 s
5.5
2
6
…continued
50
6.5
4
7
6
100
8
V GS (V) =
V GS (V) =
Conditions
I
Figure 15
I
V
I D (A)
8
S
S
V DS (V)
GS
= 20 A; V
= 20 A; dI
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
03nc64
20
14
12
11
10
03nc63
= 10 V; V
10
Rev. 01 — 14 February 2001
150
10
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
N-channel enhancement mode field-effect transistor
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
R DSon
a
--------------------------- -
R
(m )
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
2
1
0
R
30
25
20
15
10
-60
DSon
D
5
Min
= 25 A
-20
10
20
Typ
0.85
45
110
60
15
© Philips Electronics N.V. 2001. All rights reserved.
PHP54N06T
100
20
Max
1.2
140
V GS (V)
T
j
(
03aa28
o
03nc62
C)
180
25
Unit
V
ns
nC
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