FS7KM-12 Mitsubishi Electric Semiconductor, FS7KM-12 Datasheet - Page 2

• Manufacturer Part Number: FS7KM-12
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
50
40
30
20
10
20
16
12
POWER DISSIPATION DERATING CURVE
0
8
4
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
P
CASE TEMPERATURE T
D
OUTPUT CHARACTERISTICS
= 35W
10
50
(TYPICAL)
20
100
(Tch = 25 C)
30
I
I
V
V
I
I
I
I
V
V
I
Channel to case
D
G
D
D
D
D
S
GS
DS
DS
DD
= 3A, V
= 1mA, V
= 1mA, V
= 3A, V
= 3A, V
= 3A, V
= 100 A, V
T
Pulse Test
150
= 600V, V
= 25V, V
= 25V, V
= 200V, I
C
C
40
= 25°C
(°C)
DS
V
GS
GS
DS
GS
GS
GS
(V)
DS
6V
5V
GS
= 10V
= 10V
= 10V
= 0V
D
200
= 20V
DS
GS
50
= 0V
= 10V
DS
= 3A, V
= 0V, f = 1MHz
10V
= 0V
= 0V
8V
= 0V
Test conditions
GS
= 10V, R
GEN
10
10
10
10
–1
= R
5
3
2
7
5
3
2
7
5
3
2
7
5
8
6
4
2
0
1
0
2 3 5 7 10
0
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
GS
P
35W
T
Single Pulse
D
C
OUTPUT CHARACTERISTICS
=
= 50
= 25°C
4
MITSUBISHI Nch POWER MOSFET
V
1
GS
2 3 5 7 10
HIGH-SPEED SWITCHING USE
=20V
(TYPICAL)
10V
8
8V
Min.
600
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
30
2
12
2
2 3 5 7 10
Limits
T
Pulse Test
1100
Typ.
125
100
1.0
3.0
5.0
1.5
C
17
30
30
35
—
—
—
—
—
3
= 25°C
16
FS7KM-12
DS
DS
tw=10µs
100µs
1ms
10ms
DC
6V
(V)
(V)
5V
3
Max.
3.57
20
1.3
3.9
2.0
2
—
—
—
—
—
—
—
—
—
—
10
1
4
Feb.1999
Unit
C/W
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A