FS7KM-12 Mitsubishi Electric Semiconductor, FS7KM-12 Datasheet - Page 4

• Manufacturer Part Number: FS7KM-12
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
–1
8
4
0
7
5
3
2
7
5
3
2
1
0
0
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Tch = 25°C
I
–50
–50
V
I
Pulse Test
V
I
D
D
D
GS
GS
ON-STATE RESISTANCE VS.
BREAKDOWN VOLTAGE VS.
= 7A
= 1/2I
= 1mA
CHANNEL TEMPERATURE
CHANNEL TEMPERATURE
GATE-SOURCE VOLTAGE
20
= 10V
= 0V
GATE CHARGE Q
V
DS
VS.GATE CHARGE
D
0
0
= 100V
(TYPICAL)
(TYPICAL)
(TYPICAL)
40
50
50
400V
60
200V
100
100
g
(nC)
80
150
150
100
10
10
10
10
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
–4
D=1
0.5
0.2
0.1
2 3 57
5.0
4.0
3.0
2.0
1.0
20
16
12
8
4
0
0
10
0
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
SOURCE-DRAIN VOLTAGE V
–3
T
125°C
–50
C
V
I
2 3 57
FORWARD CHARACTERISTICS
D
=
Single Pulse
DS
0.05
0.02
0.01
THRESHOLD VOLTAGE VS.
= 1mA
CHANNEL TEMPERATURE
0.8
MITSUBISHI Nch POWER MOSFET
= 10V
SOURCE-DRAIN DIODE
10
PULSE WIDTH t
CHARACTERISTICS
–2
0
HIGH-SPEED SWITCHING USE
2 3 57
(TYPICAL)
1.6
(TYPICAL)
50
10
75°C
–1
25°C
2 3 5710
2.4
100
w
V
Pulse Test
(s)
GS
3.2
0
FS7KM-12
P
2 3 5710
= 0V
tw
D=
SD
DM
150
T
tw
(V)
T
4.0
1
2 3 5710
Feb.1999
2