FS7KM-12 Mitsubishi Electric Semiconductor, FS7KM-12 Datasheet - Page 3

• Manufacturer Part Number: FS7KM-12
• Description: HIGH-SPEED SWITCHING USE
• Manufacturer: Mitsubishi Electric Semiconductor

10
10
10
40
32
24
16
20
16
12
8
0
8
4
0
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
0
2 3 5 7 10
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
Tch = 25°C
f = 1MHz
V
TRANSFER CHARACTERISTICS
GS
DRAIN-SOURCE VOLTAGE
= 0V
GATE-SOURCE VOLTAGE
ON-STATE VOLTAGE VS.
4
4
CAPACITANCE VS.
0
2 3 5 7 10
(TYPICAL)
(TYPICAL)
(TYPICAL)
8
8
12
12
1
2 3 5 7 10
T
Pulse Test
T
V
Pulse Test
C
C
DS
= 25°C
I
= 25°C
16
16
D
Coss
Crss
= 50V
Ciss
GS
GS
= 14A
DS
10A
2
(V)
(V)
7A
3A
(V)
2 3
20
20
10
10
10
10
10
10
2.0
1.6
1.2
0.8
0.4
–1
10
10
10
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
3
2
1
FORWARD TRANSFER ADMITTANCE
–1
–1
–1
V
Pulse Test
SWITCHING CHARACTERISTICS
DS
T
Pulse Test
2 3
C
ON-STATE RESISTANCE VS.
2 3
2 3
= 10V
MITSUBISHI Nch POWER MOSFET
= 25°C
DRAIN CURRENT I
DRAIN CURRENT I
DRAIN CURRENT I
5 7 10
VS.DRAIN CURRENT
DRAIN CURRENT
HIGH-SPEED SWITCHING USE
5 7 10
5 7 10
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
2 3 5 7 10
V
GS
Tch = 25°C
V
V
R
0
0
DD
GS
GEN
= 10V
= 10V
= 200V
2 3
2 3
= R
1
125°C
D
D
D
T
GS
C
2 3 5 7 10
(A)
(A)
(A)
FS7KM-12
20V
t
t
= 25°C
d(off)
t
d(on)
= 50
f
t
5 7 10
5 7 10
75°C
r
1
1
2
Feb.1999